A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR

This paper reports a novel high voltage Conductivity Modulated Thin-Fi lm Transistor (CMTFT) fabricated using polycrystalline silicon, The tr ansistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance, Experimenta l on-state and off-state current-voltage characteristics of the CMTFT have been compared,vith those of the conventional offset drain device, Results show that the CMTFT has six times to more than three orders o f magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed, The CMTFT devices can be fabricated using a low temperature process (620 degrees C) which is highly desirable for large area electronic applications.