RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED OXIDES ON N-TYPE 6H-SILICON CARBIDE

The electrical characteristics of oxides deposited on nitrogen doped N -type 6H-Silicon carbide using rapid thermal chemical vapor deposition are reported, The gases used in the deposition process were silane (d iluted with argon), and nitrous oxide, The oxide was found to have an interface state density of 7 x 10(11) cm(-2)eV(-1) and a low effective charge density of 1.1 x 10(11) cm(-2). The deposited oxide is compare d with oxide grown thermally on N-type 6H-silicon carbide by wet oxida tion, The quality of the deposited oxide is found to be comparable to the quality of the thermal oxide, An excellent low thermal budget proc ess to obtain good oxides on N-type 6H-silicon carbide has thus been d emonstrated for the first time.