EXCITONIC LIFETIME FOR DOUBLE-BARRIER HETEROSTRUCTURES IN THE PRESENCE OF PHONONS

Authors
HERNANDEZCABRERA A ACEITUNO P CRUZ H
Citation
A. Hernandezcabrera et al., EXCITONIC LIFETIME FOR DOUBLE-BARRIER HETEROSTRUCTURES IN THE PRESENCE OF PHONONS, Physical review. B, Condensed matter, 52(15), 1995, pp. 10729-10732
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
52
Issue
15
Year of publication
1995
Pages
10729 - 10732
Database
ISI
SICI code
0163-1829(1995)52:15<10729:ELFDHI>2.0.ZU;2-Y
Abstract
In this work, we have numerically integrated in space and time the eff ective-mass Schrodinger equation for an electron-hole pair in a GaAs/A lAs double-barrier heterostructure. Considering the electron-phonon in teraction and an external electric field, we have studied the excitoni c tunneling escape process from the double-barrier quantum well. In th is way, electronic lifetimes have been obtained at different well widt hs and applied electric fields.