Using an air-bridged gate, we have fabricated two closely spaced paral
lel quantum point contacts (QPC's) in a GaAs-AlxGa1-xAs heterostructur
e. By biasing the gates appropriately, we have measured the magnetores
istance (MR) at low fields for both single and parallel point contacts
. Assuming a parabolic potential, the MR of a single QPC can be quanti
tatively understood by a previous theory incorporating magnetic-field-
suppressed backscattering. However, the MR of two QPC's in parallel di
splays resistance peaks, implying a failure of Ohm's law due to coupli
ng between the channels. These resistance peaks are shown to be due to
magnetic focusing of electrons from one channel into the other.