ELECTRONIC-STRUCTURE OF GAAS WITH AN INAS(001) MONOLAYER

The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs)(1)(GaA s)(n) (001) strained superlattice is studied via ab initio self-consis tent pseudopotential calculations. Both electrons and holes are locali zed nearby the inserted InAs monolayer, which therefore acts as a quan tum well for all the charge carriers. The small thickness of the inser ted InAs slab is responsible for high confinement energies of the char ge carriers, and therefore the interband electron-heavy-hole transitio n energy is close to the energy gap of the bulk GaAs, in agreement wit h recent experimental data.