VALENCE-BAND CHANGES IN SB2-XINXTE3 AND SB2TE3-YSEY BY TRANSPORT AND SHUBNIKOV-DE HAAS EFFECT MEASUREMENTS

Measurements of galvanomagnetic effects in the temperature range 4.2-3 00 K and photoinduced ''transient thermoelectric effect'' (TLE) along the C-2 axis at 300 K have been made for two types of solid solutions of semiconductors Sb2-xInxTe3 (0 less than or equal to x less than or equal to 0.4) and Sb2Te3-ySey (0 less than or equal to y less than or equal to 1.8). By incorporating In atoms into the Sb2Te3 lattices, Hal l coefficients, Hall mobilities, and the frequencies of Shubnikov-de H aas (SdH) oscillations are varied systematically. For Sb2Te3-ySey, the Hall mobility is decreased with y up to y = 0.7 and then increased ap preciably in the range 0.7 < y < 1.8, and a frequency component of SdH oscillations is observed for y greater than or equal to 0.25. The obs erved TTE voltages decay exponentially with time, showing a multirelax ation process with characteristic relaxation times tau(i) (i = 1,2,... ) for thermal diffusions of photoinduced conduction carriers, whose an alyses give valuable information about carrier mobilities and effectiv e masses. In the host material Sb2Te3, four relaxation times tau(i) (i = 1-4) are found, which are attributable to holes in the anisotropic upper and lower valence bands with effective-mass anisotropies of abou t 3. In addition, we have found two kinds of extra relaxation times ta u(i) (i = 5 and 6) for y > 0.6 in Sb2Te3-ySey, confirming the existenc e of a valence band, whose anisotropy in the effective mass along the C-2 direction is evaluated to be of the order of 2-2.5. Based on these experimental data we have proposed the most probable band model for t hese solid solutions.