CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION

Citation
Tm. Grehk et al., CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION, Physical review. B, Condensed matter, 52(15), 1995, pp. 11165-11171
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
15
Year of publication
1995
Pages
11165 - 11171
Database
ISI
SICI code
0163-1829(1995)52:15<11165:CACSSS>2.0.ZU;2-I
Abstract
Both the clean and Cs-exposed Si(111)root 3X root 3R30 degrees:B surfa ces have been investigated by high-resolution photoemission. In the sp ectra from the Si 2p level, contributions were identified from the bul k, the adatoms plus the first layer, the second and 2/3 ML of the thir d-layer atoms not binding to the B atoms, and, finally, the 1/3 ML of third-layer atoms binding to the boron atoms. The interaction between the Cs atoms and the surface is found to be dependent on the coverage. At low coverages the geometric and electronic structure of the Si(111 )root 3X root 3R30 degrees:B interface is only to a minor degree affec ted by the presence of Cs on the surface. At high coverage the Cs atom s react with the surface and alter the binding configuration of the Si adatoms.