HIGH-POWER NARROW BEAM SINGLEMODE ARROW-TYPE INGAAS INGAASP/INGAP DIODE-LASERS/

Authors
BHATTACHARYA A MAWST LJ NESNIDAL MP LOPEZ J BOTEZ D
Citation
A. Bhattacharya et al., HIGH-POWER NARROW BEAM SINGLEMODE ARROW-TYPE INGAAS INGAASP/INGAP DIODE-LASERS/, Electronics Letters, 31(21), 1995, pp. 1837-1838
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
21
Year of publication
1995
Pages
1837 - 1838
Database
ISI
SICI code
0013-5194(1995)31:21<1837:HNBSAI>2.0.ZU;2-0
Abstract
The authors have obtained, from 20 mu m aperture 0.98 mu m wavelength three-core ARROW-type InGaAs/InGaAsP/InGaP diode lasers, a diffraction -limited beam pattern up to 0.55W peak-pulsed power with 78% of the li ght in the central lobe; and near diffraction-limited-beam operation t o 0.7W. Interelement optical absorption loss is found to be important for improved beam quality at high drive levels, in good agreement with theory.