TRANSVERSE JUNCTION WAVE-GUIDE INGAAS INP PHOTODIODE/

Authors
LUO DP ZHU JT JIANG XS KELLNER AL YU PKL
Citation
Dp. Luo et al., TRANSVERSE JUNCTION WAVE-GUIDE INGAAS INP PHOTODIODE/, Electronics Letters, 31(21), 1995, pp. 1872-1873
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
21
Year of publication
1995
Pages
1872 - 1873
Database
ISI
SICI code
0013-5194(1995)31:21<1872:TJWIIP>2.0.ZU;2-A
Abstract
A novel transverse InP/InGaAs/InP pn junction waveguide photodiode is demonstrated using in situ zinc diffusion before a regrowth step insid e an organometallic vapour phase epitaxy reactor. The detector exhibit s high speed, low leakage current, low capacitance and high breakdown voltage characteristics.