MECHANISM OF DRAIN CURRENT DROOP IN GAAS-MESFETS

Authors
LADBROOKE PH JASTRZEBSKI AK DONARSKI RJ BRIDGE JP BARNABY JE
Citation
Ph. Ladbrooke et al., MECHANISM OF DRAIN CURRENT DROOP IN GAAS-MESFETS, Electronics Letters, 31(21), 1995, pp. 1875-1876
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
21
Year of publication
1995
Pages
1875 - 1876
Database
ISI
SICI code
0013-5194(1995)31:21<1875:MODCDI>2.0.ZU;2-P
Abstract
The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.