ELECTRONIC STATES OF THE HETEROEPITAXIAL DOUBLE-LAYER SYSTEM - GRAPHITE MONOLAYER HEXAGONAL BORON NITRIDE/NI(111)/

Authors
NAGASHIMA A GAMOU Y TERAI M WAKABAYASHI M OSHIMA C
Citation
A. Nagashima et al., ELECTRONIC STATES OF THE HETEROEPITAXIAL DOUBLE-LAYER SYSTEM - GRAPHITE MONOLAYER HEXAGONAL BORON NITRIDE/NI(111)/, Physical review. B, Condensed matter, 54(19), 1996, pp. 13491-13494
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
19
Year of publication
1996
Pages
13491 - 13494
Database
ISI
SICI code
0163-1829(1996)54:19<13491:ESOTHD>2.0.ZU;2-F
Abstract
By using angle-resolved ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and work function measurement, we have exp lored the electronic states of the heteroepitaxial double-layer (HEDL) system composed of Ni(111), monolayer hexagonal boron nitride, and gr aphite overlayer. Present data clearly indicate that in the HEDL syste m, the spatial change of the electronic states at the interfaces is ab rupt in atomic scale.