A RHEED AND AFM STUDY OF THE EPITAXIAL-GROWTH OF PD ON PD(001)

Citation
J. Wild et al., A RHEED AND AFM STUDY OF THE EPITAXIAL-GROWTH OF PD ON PD(001), Czechoslovak journal of Physics, 45(9), 1995, pp. 777-784
Citations number
15
Categorie Soggetti
Physics
ISSN journal
00114626
Volume
45
Issue
9
Year of publication
1995
Pages
777 - 784
Database
ISI
SICI code
0011-4626(1995)45:9<777:ARAASO>2.0.ZU;2-K
Abstract
The homoepitaxial growth of Pd on a Pd(001) single crystal surface was studied by the RHEED and AFM methods. The values of surface width obt ained by both the methods were compared to each other. Generally, we o bserved that at the room temperature and at the deposition rate of 1nm /min the surface roughness increases with the mass thickness of the de posited layer. Up to the mass thickness of 10 nm the values of surface width sigma(0) calculated on the basis of measurements carried out by the RHEED and AFM methods are in relatively good mutual agreement. If the values of the mass thickness are higher than 10 nm, surface polyc rystalline phase develops.