A. Nayak et Hd. Banerjee, ELECTRON-BEAM ACTIVATED PLASMA CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE DIAMOND FILMS, Physica status solidi. a, Applied research, 151(1), 1995, pp. 107-112
Polycrystalline diamond films (1 to 10 mu m grain diameter) are succes
sfully deposited by electron beam activated chemical vapour deposition
technique using glow discharge/plasma generated electron beam from 3
to 4 vol% CH3COCH3 in H-2. The growth rates of film depositions are 4
mu m/h at 533 Pa pressure and at relatively low substrate (silicon) te
mperatures (550 to 600 degrees C). Crystallinity, morphology, and qual
ity of the diamond films are studied by X-ray diffraction, scanning el
ectron microscopy, and laser Raman spectroscopy techniques, respective
ly. The use of electron bombardment in the presence of H and OH plays
a dominant role for etching the non-diamond component in the film and
facilitating the growth of a stable phase of tetrahedrally coordinated
carbon (diamond) films at lower temperatures.