FORMATION OF SI SIGE NANOSTRUCTURES BY SELECTIVE LOW-PRESSURE VPE/

Si/SiGe heterostructures with lateral dimensions below 100 nm are grow n by selective low pressure vapour phase epitaxy (LPVPE). Pattern tran sfer is performed using high energy electron beam lithography and reac tive ion etching. Using a novel two-layer resist system dots with a di ameter of 60 nm are produced. The structures are not affected by any e tching step and a filling factor of more than 50% can be achieved.