G. Schmidt et al., FORMATION OF SI SIGE NANOSTRUCTURES BY SELECTIVE LOW-PRESSURE VPE/, Physica status solidi. a, Applied research, 151(1), 1995, pp. 165-169
Si/SiGe heterostructures with lateral dimensions below 100 nm are grow
n by selective low pressure vapour phase epitaxy (LPVPE). Pattern tran
sfer is performed using high energy electron beam lithography and reac
tive ion etching. Using a novel two-layer resist system dots with a di
ameter of 60 nm are produced. The structures are not affected by any e
tching step and a filling factor of more than 50% can be achieved.