Constant-temperature constant-volume molecular dynamics simulations we
re performed for the fluoride-perovskite KCaF3. Ionic conductivity val
ues were predicted using systems designed so as to simulate crystals c
ontaining extrinsic defects; these values were compared with experimen
tal measurements made between 575 and 690 K. At these temperatures, ex
trinsic defects were found to be prerequisite for diffusion of fluorin
e ions. During defect-free simulations, intrinsic disorder was not gen
erated spontaneously. Fluorine migration precedes via a discrete vacan
cy ''hopping'' mechanism, in which the anion migration time is of at l
east an order of magnitude less than the average residence time at a g
iven lattice site. This is in contrast to the partially correlated mec
hanism observed at temperatures approaching the simulated melting poin
t for KCaF3, in which vacancies are generated by the formation of fluo
rine ion pairs occupying interstitial sites.