QUANTITATIVE STUDY OF ISOELECTRONIC COPPER PAIRS BY PHOTOLUMINESCENCEAND DEEP-LEVEL TRANSIENT SPECTROSCOPY

The correlation between the Cu induced deep level at E(v) + 0.1 eV and the appearance of luminescent Cu pairs , leading to a characteristic line spectrum with the most intense Cu-0(0) no phonon line at 1.014 eV , has been examined using deep level transient spectroscopy and photol uminescence. Samples of floating zone (FZ) grown p-Si with concentrati ons of the 0.1 eV Cu centre varying from 10(11) to about 10(14) Cm-3 w ere obtained by a Cu contamination treatment without quenching. The co ncentration of the luminescent Cu pairs was estimated by analysing the dependence of the Cu-0(0) line intensity on the excitation power in t he transition region to saturation. The saturation intensities, which are proportional to the concentration of luminescent Cu centres, show a linear dependence on the 0.1 eV deep centres with good correlation, suggesting that the same Cu induced centre is detected by deep level t ransient spectroscopy and photoluminescence.