MINORITY AND MAJORITY CARRIER TRAPS ASSOCIATED WITH OXIDATION-INDUCEDSTACKING-FAULTS IN SILICON

Majority and minority traps associated with oxidation induced stacking faults (OISFs) have been investigated by deep level transient spectro scopy and minority carrier transient spectroscopy. Electron and hole t raps have been characterised in n and p type Si, and the activation en ergies of all extended defect related traps are found to be dependent on the occupancy of the state associated with the extended defect. Maj ority and minority carrier traps in n type Si exhibit non-exponential trap filling, which indicates the presence of a significant electrosta tic barrier around the OISF. The electrical properties of hole (minori ty) traps measured by minority carrier transient spectroscopy in n typ e Si are found to be different from the deep level transient spectrosc opy signature of hole (majority) traps in p type Si, and this is expla ined by examining differences between conditions during the measuremen ts. By examining seperately the electron and hole capture properties o f OISF related traps, one particular trap can be identified as a recom bination centre. The capture cross-section of the OISF related hole tr ap in n type Si has been measured and it was found that, at low occupa ncy the trap captured cross-section is 7 x 10(-14) cm(2).