PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN AMORPHOUS-SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
COSTA J ROURA P SULIMOV NA SARDIN G CAMPMANY J MORANTE JR BERTRAN E
Citation
J. Costa et al., PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN AMORPHOUS-SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Materials science and technology, 11(7), 1995, pp. 707-710
Citations number
15
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
Journal title
Materials science and technology → ACNP
ISSN journal
02670836
Volume
11
Issue
7
Year of publication
1995
Pages
707 - 710
Database
ISI
SICI code
0267-0836(1995)11:7<707:POPIAN>2.0.ZU;2-A
Abstract
The photoluminescence emission in silicon powder grown by plasma enhan ced chemical vapour deposition has a very unusual dependence on pressu re. Its intensity diminishes exponentially, I(PL)proportional to I-0 e xp(-p/p(0)), where p(o) has a value of several pascals. Consequently i t is detectable only under vacuum. This dependence is analysed within the framework of a multistep multiphoton excitation process. It is sho wn that all exponential dependence on pressure of the dynamic constant s (lifetimes and optical cross-sections involved in the model) can acc ount qualitatively for all the experimental results.