X-RAY PHOTOELECTRON-SPECTROSCOPY OF LUMINESCENT POROUS SILICON

Citation
R. Guerrerolemus et al., X-RAY PHOTOELECTRON-SPECTROSCOPY OF LUMINESCENT POROUS SILICON, Materials science and technology, 11(7), 1995, pp. 711-715
Citations number
21
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
ISSN journal
02670836
Volume
11
Issue
7
Year of publication
1995
Pages
711 - 715
Database
ISI
SICI code
0267-0836(1995)11:7<711:XPOLPS>2.0.ZU;2-1
Abstract
X-ray photoelectron spectroscopy has been performed in photoluminescen t porous Si layers after different treatments, namely, anodisation onl y in a HF-ethanol solution, rinsing in deionised water ethanol immersi on, and exposure to ambient conditions. The spectra recorded just afte r formation in the HF solution are the most representative of real por ous Si layer structures. However, the pretreatment in water, exposure to ambient conditions for a long period and immersion in ethanol degra des the porous Si layer surface to a greater or lesser extent. The gro wth of different oxide phases and the amorphisation of the structures after the pretreatments are also discussed.