We have coated the silicon field emission tips with diamond-like carbo
n (DLC). The array of tips was made of n-type silicon using convention
al dry etch. Before DLC coating, the tips were bombarded with argon io
n to clean the surface. We found that this bombardment improved the as
pect ratio of the tips and the DLC adhesion to the silicon tips. The D
LC film was coated using radio frequency plasma assisted-CVD using C6H
6 gas. Initially, the end of the tips was coated with ball-shape DLC.
The current-voltage curve was measured in 10(-6) Torr pressure. The DL
C-coated tips emitted current at lower onset voltage than as-prepared
silicon tips.