PECULIARITIES OF FIELD ELECTRON-EMISSION FROM CVD DIAMOND FILMS

Results ale reported on characterization of the field electron emissio n from diamond films grown by de are discharge plasma CVD onto Si subs trates from CH4-H-2 gas mixtures. The field electron emission was obse rved at 15-20 V/mu m. Emission current-voltage dependences were studie d for films prepared at different CVD conditions and post-growth surfa ce treatment/modification (ultrathin metal and metal oxide coatings, M W-plasma processing, laser-induced surface graphitization). Features o f emission current versus applied field behaviour (including a hystere sis phenomenon, vacuum are initiation) and ultralow (0.1-0.5 eV) value s of effective work function derived from Fowler-Nordheim plot fitting are discussed. A high vacuum scanning tunneling-field emission micros cope was applied for simultaneous mapping of field electron emission i nten-sity, topography and work function to study electronic and struct ural properties of field emission centers.