PECULIARITIES OF THE FIELD-EMISSION WITH POROUS SI SURFACES, COVERED BY ULTRATHIN DLC FILMS

Field emission of electrons from silicon tips with porous silicon laye rs on their surface has been investigated. The silicon tip arrays were formed by wet chemical etching of n-type Si. The wafers with piramida l emitters were then anodized to form on the surface a porous silicon layer. The conditions of the anodic etching of silicon in ethanol solu tion of I-IF under the illumination have been changed widely. The inve stigation of influence of the thin diamond-like carbon film on differe nt porous silicon layers on electron field emission have been performe d. The parameters of the emission efficiency such as field enhancement factors, emitting area factors and threshold voltages for comparison and characterization of different layer structures have been estimated from current-voltage dependences. The results show significant influe nce of preparation technology of layer structures on their emission pr operties.