FIELD - AND PHOTOASSISTED FIELD-EMISSION STUDIES OF CALCIUM-FLUORIDE COATED SILICON TIPS

Authors
KONOPSKY VN ZHIRNOV VV SOKOLOV NS ALVAREZ JC GIVARGIZOV EI BORMATOVA LV LETOKHOV VS SEKATSKII SK
Citation
Vn. Konopsky et al., FIELD - AND PHOTOASSISTED FIELD-EMISSION STUDIES OF CALCIUM-FLUORIDE COATED SILICON TIPS, Journal de physique. IV, 6(C5), 1996, pp. 129-134
Citations number
22
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
6
Issue
C5
Year of publication
1996
Pages
129 - 134
Database
ISI
SICI code
1155-4339(1996)6:C5<129:F-APFS>2.0.ZU;2-D
Abstract
Measurements of field emission current-voltage and Fowler-Nordheim cha racteristics of Si tips covered by 100 nm-thick CaF2 epitaxial layers have been for the first time performed. It was found that in spite of dielectric nature of the coating, the tips demonstrate high emissivity comparable with the diamond coated tips. Results of high resolution p hotoassisted field emission investigations of CaF2/Si structures are p resented.