GAS-SENSITIVE GAP FORMATION BY LASER-ABLATION IN IN2O3 LAYER - APPLICATION AS HUMIDITY SENSOR

Citation
J. Kleperis et al., GAS-SENSITIVE GAP FORMATION BY LASER-ABLATION IN IN2O3 LAYER - APPLICATION AS HUMIDITY SENSOR, Sensors and actuators. B, Chemical, 28(2), 1995, pp. 135-138
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09254005
Volume
28
Issue
2
Year of publication
1995
Pages
135 - 138
Database
ISI
SICI code
0925-4005(1995)28:2<135:GGFBLI>2.0.ZU;2-U
Abstract
A new method of preparing a gas-sensitive device by laser ablation of a thin gap in a thin conducting In2O3 layer has been discovered. In th e bottom of the gap no products from In2O3 are found, thereby indicati ng that the reorganized surface of the glass substrate is responsible for the humidity sensitivity. Impedance spectra of the gap processed b y a laser beam are measured in the humidity range RH=25-100% at temper atures T=0-45 degrees C, where a linear dependence of the logarithm of resistivity on the values of humidity is estimated.