A MONOLITHICALLY INTEGRATED F-BAND RESISTIVE INALAS INGAAS/INP HFET MIXER/

Authors
KARLSSON C RORSMAN N ZIRATH H
Citation
C. Karlsson et al., A MONOLITHICALLY INTEGRATED F-BAND RESISTIVE INALAS INGAAS/INP HFET MIXER/, IEEE microwave and guided wave letters, 5(11), 1995, pp. 394-395
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
5
Issue
11
Year of publication
1995
Pages
394 - 395
Database
ISI
SICI code
1051-8207(1995)5:11<394:AMIFRI>2.0.ZU;2-T
Abstract
A monolithically integrated F-band resistive HFET mixer has been desig ned, simulated, fabricated, and characterized. The mixer is based on a n InAlAs/InGaAs/InP HFET with 0.15 mu m gate length. The measured mini mum conversion loss is 9 dB at 112.5 GHz and an LO power of 4 dBm, whi ch is the lowest conversion loss reported for resistive HFET mixers in this frequency range.