CONSISTENT QUANTITATIVE MODEL FOR THE SPATIAL EXTENT OF POINT-DEFECT INTERACTIONS IN SILICON

The silicon point defect properties which control the spatial extent o f their interactions (e.g., interstitial diffusivity) have been calcul ated by many researchers. However, large discrepancies exist in the re ported values of these parameters, and it is essential to have a consi stent set of parameters for use in process simulation. To meet this ne ed, we present here a model which includes important interactions whic h have been ignored in previous analyses, specifically bulk recombinat ion of interstitials with vacancies and segregation of interstitials t o surface oxide films. We assess the effectiveness of the model in pre dicting the spatial. extent of point defect interactions by comparing simulation results with a wide range of experimental data. Although th is same experimental data previously gave large differences in calcula ted parameter values, we obtain a single set of model parameters which can account for the full range of data in a consistent manner. (C) 19 95 American Institute of Physics.