DEPOSITION AND HYDROGEN CONTENT OF CARBON-FILMS GROWN BY CH3-BEAM BOMBARDMENT( ION)

Citation
H. Plank et al., DEPOSITION AND HYDROGEN CONTENT OF CARBON-FILMS GROWN BY CH3-BEAM BOMBARDMENT( ION), Journal of applied physics, 78(9), 1995, pp. 5366-5372
Citations number
38
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
9
Year of publication
1995
Pages
5366 - 5372
Database
ISI
SICI code
0021-8979(1995)78:9<5366:DAHCOC>2.0.ZU;2-K
Abstract
Carbon deposition and hydrogen codeposition is investigated as a funct ion of ion energy, fluence, and target temperature at normal incidence by bombardment of silicon and pyrolitic graphite substrates with mass selected CH3+ molecules. An amorphous hydrogenated carbon layer (a-C: H) is formed in a thickness range of 40-130 nm at a fluence of 3x10(18 )/cm(2). The deposition process, the re-erosion phenomenon, the hydrog en content, and the WC ratios of the carbon films are studied between 300 and 1000 K in the ion energy range from 150 eV to 3 keV. The exper imental results are compared with those of TRIDYN computer simulations and previous experimental results of carbon sputtering by atomic H+ a nd C+ beams in order to obtain a better understanding of the interacti on between hydrocarbon ions and the carbon-based wall materials in fus ion devices. (C) 1995 American Institute of Physics.