ANALYSIS OF NONIDEAL SCHOTTKY AND P-N-JUNCTION DIODES - EXTRACTION OFPARAMETERS FROM I-V PLOTS

We propose two novel methods of determining nonideal Schottky and p-n junction diodes parameters from I-V plots. The series resistance R(s), saturation current I-s, as well as the bias-dependent ideality factor n(V), can be obtained from two successive I-V measurements-one solely of the diode and the other with an external resistance added in serie s with the measured diode. Our analysis confirms that the methods prod uce accurate and reliable results even when the conventional technique s fail, such as when we have strongly varying function n(V) in the pre sence of series resistance and an experimental noise. (C) 1995 America n Institute of Physics.