CONTROLLED DISORDERING OF COMPRESSIVELY STRAINED INGAASP MULTIPLE-QUANTUM WELLS UNDER SIO-P ENCAPSULANT AND APPLICATION TO LASER-MODULATOR INTEGRATION

We investigated the potentiality of a phosphorus-doped silicon oxide ( SiO:P) carrier-free disordering source for applications in photonic de vices integration schemes. This is accomplished in three successive st eps by employing an InGaAsP/InGaAsP structure with compressively strai ned wells and lattice-matched barriers designed for operation around s imilar to 1.55 mu m. First of ail, we showed that the SiO:P encapsulan t offers a good control over a wide range of disorder (blue shifts as high as similar to 150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic featu res in moderately blue-shifted (similar to 40 meV) samples. And, final ly, a first attempt of its application in integration technology is ma de by realizing a monolithic composite of a distributed feedback laser and a quantum-confined stark effect electroabsorption modulator opera ting around 1.54 mu m. (C) 1995 American Institute of Physics.