2-DIMENSIONAL NUMERICAL-SIMULATION OF THE PULSE RESPONSE OF A SEMIINSULATING INGAAS-FE PHOTODETECTOR

Citation
Cm. Hurd et Wr. Mckinnon, 2-DIMENSIONAL NUMERICAL-SIMULATION OF THE PULSE RESPONSE OF A SEMIINSULATING INGAAS-FE PHOTODETECTOR, Journal of applied physics, 78(9), 1995, pp. 5756-5764
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
9
Year of publication
1995
Pages
5756 - 5764
Database
ISI
SICI code
0021-8979(1995)78:9<5756:2NOTPR>2.0.ZU;2-Z
Abstract
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contac ts made to an active layer of semi-insulating InGaAs:Fe that is suppor ted on an InP:Fe substrate. The simulation uses a two-dimensional, dri ft/diffusion calculation and includes external circuit elements. Reali stic conditions are considered where the semi-insulating material is r epresented by a two-level compensation model with Fe as a deep accepto r and hole trap that compensates shallow n-type impurities. The calcul ated results are compared directly with experimental ones for micron-s cale devices described in the literature. The calculation gives a micr oscopic picture of how trapping controls particularly the falling side of the transient response, and it also shows how the measured perform ance of the device can reflect the influence of typical external circu it elements.