PERSISTENT PHOTOCONDUCTIVITY AND DX-CENTERS IN CD0.8ZN0.2TE-CL

Authors
BENNETT JW THIO T KABAKOFF SE CHADI DJ LINKE RA BECLA P
Citation
Jw. Bennett et al., PERSISTENT PHOTOCONDUCTIVITY AND DX-CENTERS IN CD0.8ZN0.2TE-CL, Journal of applied physics, 78(9), 1995, pp. 5827-5829
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
9
Year of publication
1995
Pages
5827 - 5829
Database
ISI
SICI code
0021-8979(1995)78:9<5827:PPADIC>2.0.ZU;2-G
Abstract
Transport measurements on large single crystals of Cd0.8Zn0.2Te:Cl ind icate that Cl donors form DX centers in CdZnTe. We have observed persi stent photoconductivity (PPC) with;an annealing temperature T(alpha)ap proximate to 130 K. Hall-effect experiments indicate that the PPC aris es from a persistent increase in the density of charge carriers; the s aturation density is N-sat=6x10(16) cm(-3). The deep binding energy of the DX center is E(d)=0.22 eV. (C) 1995 American Institute of Physics .