R-CURVE BEHAVIOR AND MICROSTRUCTURE OF SINTERED SILICON-NITRIDE

Citation
Yw. Kim et al., R-CURVE BEHAVIOR AND MICROSTRUCTURE OF SINTERED SILICON-NITRIDE, Journal of Materials Science, 30(20), 1995, pp. 5178-5184
Citations number
26
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
30
Issue
20
Year of publication
1995
Pages
5178 - 5184
Database
ISI
SICI code
0022-2461(1995)30:20<5178:RBAMOS>2.0.ZU;2-7
Abstract
R-curves for two in situ reinforced silicon nitrides A and B, of diffe rent microstructures, were characterized using indentation-crack growt h measurements. Silicon nitride B, with its coarser microstructure and 8 MPa m(1/2) tough ness, showed higher resistance to crack growth and more damage tolerance than silicon nitride A, with its finer microstr ucture and 7 MPa m(1/2) toughness. However, silicon nitride A showed a higher Weibull modulus than that of silicon nitride B due to the rela tively narrow critical grain-size distribution. These results suggest that a coarse microstructure with narrow flaw-size distribution is ben eficial to toughening, damage tolerance, and reliability.