MEMORY EFFECT IN LAYERED SEMICONDUCTOR TLINS2 WITH INCOMMENSURATE PHASE

The temperature dependence of pyroelectric current was studied for the ferroelectric-semiconductor crystal TlInS2 in the temperature range o f commensurate and incommensurate phases. A remarkable shift of the lo ck-in transition point to lower temperatures has been observed on heat ing runs after turning from a heating to a cooling from different temp eratures within the incommensurate phase. The observed effect was inte rpreted by the pinning of modulation due to mobile defects in the crys tal having layered structure and was attributed to a kind of memory ef fect.