BOUND MAGNETO-ACCEPTOR AND MAGNETODONOR STATES IN THE CONDUCTION-BANDOF GAAS-GAALAS HETEROSTRUCTURES

Authors
VINCENTE P RAYMOND A SAADI MK COUZINET B KUBISA M ZAWADZKI W ETIENNE B
Citation
P. Vincente et al., BOUND MAGNETO-ACCEPTOR AND MAGNETODONOR STATES IN THE CONDUCTION-BANDOF GAAS-GAALAS HETEROSTRUCTURES, Solid state communications, 96(11), 1995, pp. 901-905
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
96
Issue
11
Year of publication
1995
Pages
901 - 905
Database
ISI
SICI code
0038-1098(1995)96:11<901:BMAMSI>2.0.ZU;2-R
Abstract
Interband magneto-photoluminescence from asymmetric modulation-doped G aAs-GaAlAs quantum wells has been investigated. In addition to the fre e-carrier Landau level excitations, transitions between magneto-donor and free hole states have been observed. Experiments with tilted magne tic field provide strong evidence for the existence of conduction elec trons bound to ionized magneto-acceptors characterized by discrete ene rgies above the conduction band Landau levels.