PHOTOEMISSION-STUDIES OF AMORPHOUS-SILICON INDUCED BY P-IMPLANTATION(ION)

An amorphous Si layer was formed on a Si (100) surface by P+ implantat ion at 80 keV. This layer was investigated by means of photoelectron s pectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. T he differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher bind ing energy. Qualitativity similar results have been reported for Sb im planted amorphous Ge and the modification seems to be due to the chang ed short range order.