PROCESS PARAMETERS FOR IN-SITU GROWTH OF SIC WHISKERS IN BULK POROUS CARBON

Authors
HUA CK DAN P QIANG XZ
Citation
Ck. Hua et al., PROCESS PARAMETERS FOR IN-SITU GROWTH OF SIC WHISKERS IN BULK POROUS CARBON, British ceramic transactions, 94(3), 1995, pp. 118-122
Citations number
11
Categorie Soggetti
Material Science, Ceramics
Journal title
British ceramic transactions → ACNP
ISSN journal
09679782
Volume
94
Issue
3
Year of publication
1995
Pages
118 - 122
Database
ISI
SICI code
0967-9782(1995)94:3<118:PPFIGO>2.0.ZU;2-3
Abstract
The process parameters for in situ growth of SiC whiskers in bulk poro us carbon have been investigated experimentally and analysed on the ba sis of a macrokinetic model. Both experiment and model showed that the in situ whisker growth is mainly dependent on the temperature and gas composition at the surface of the bulk porous carbon, and that the pr ocess parameters should be changed to obtain in situ whisker growth wh en additional reactions occur, for example, by addition of silicon.