T. Tokiai et al., THERMOELECTRIC PROPERTIES OF P-TYPE IRON DISILICIDE CERAMICS FABRICATED FROM THE COMPOSITE POWDER PREPARED BY PRECIPITATION METHOD, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 103(7), 1995, pp. 670-675
p-type semiconducting ceramics of iron disilicide with high thermoelec
tric figures of merit were fabricated from composite powders composed
of Fe0.99Cr0.01Si2.00/ 5.38 mass% Cr(OH)(3) or Fe0.92Mn0.08Si2.00/5.38
mass% Mn(OH)(2) that had been prepared by the precipitation method. T
he figures of merit were 0.52 x 10(-4)/K(673 K) and 1.23 x 10(-4)/K(87
3K) for Cr-doped and Mn-doped iron disilicide, respectively. Increase
in the figure of merit through metal hydroxide addition was considered
to be due to the optimization of the acceptor concentration which was
caused by the simultaneous dissolution of dopant metals and oxygen in
to the iron disilicide phase.