Gq. Hai et N. Studart, DEPENDENCE OF THE ELECTRON-MOBILITY ON THE ACCEPTOR CONCENTRATION IN SI DELTA-DOPED GAAS, Physical review. B, Condensed matter, 52(4), 1995, pp. 2245-2248
The effect of the background acceptor concentration on the electron mo
bility in Si delta-doped GaAs has been investigated. The subband elect
ronic structure of the delta-doped system was obtained by solving self
-consistently the coupled Schrodinger and Poisson equations. The scree
ned ionized impurity potential is considered by taking the dielectric
matrix of the multisubband system within the random-phase approximatio
n. We found that the background acceptor concentration in the present
system strongly modifies both the mobilities of electrons in higher su
bbands and the average drift mobility. Our results may provide useful
information for the interpretation of experimental mobility data in de
lta-doped semiconductors and related devices.