DEPENDENCE OF THE ELECTRON-MOBILITY ON THE ACCEPTOR CONCENTRATION IN SI DELTA-DOPED GAAS

The effect of the background acceptor concentration on the electron mo bility in Si delta-doped GaAs has been investigated. The subband elect ronic structure of the delta-doped system was obtained by solving self -consistently the coupled Schrodinger and Poisson equations. The scree ned ionized impurity potential is considered by taking the dielectric matrix of the multisubband system within the random-phase approximatio n. We found that the background acceptor concentration in the present system strongly modifies both the mobilities of electrons in higher su bbands and the average drift mobility. Our results may provide useful information for the interpretation of experimental mobility data in de lta-doped semiconductors and related devices.