NANOCRYSTALLINE GE FILAMENTS IN THE PORES OF A MESOSILICATE

Citation
R. Leon et al., NANOCRYSTALLINE GE FILAMENTS IN THE PORES OF A MESOSILICATE, Physical review. B, Condensed matter, 52(4), 1995, pp. 2285-2288
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
4
Year of publication
1995
Pages
2285 - 2288
Database
ISI
SICI code
0163-1829(1995)52:4<2285:NGFITP>2.0.ZU;2-9
Abstract
Direct imaging showing pore filling of a mesopore (MCM-41) by a semico nductor has been achieved by transmission-electron microscopy (TEM). G e was deposited using vapor-phase epitaxy where the mesopore wall hydr oxyls acted as anchor points to seed the nucleation of semiconductor c lusters in the mesosilicate channels. Dark-field TEM micrographs with diffraction contrast originating exclusively from germanium show secti ons of Ge crystallites taking the shape and periodicity of the mesosil icate, indicating that the deposited semiconductor can fill the hexago nal pores. This result shows promise for the use of mesopores as hosts for semiconductor quantum wire structures.