Direct imaging showing pore filling of a mesopore (MCM-41) by a semico
nductor has been achieved by transmission-electron microscopy (TEM). G
e was deposited using vapor-phase epitaxy where the mesopore wall hydr
oxyls acted as anchor points to seed the nucleation of semiconductor c
lusters in the mesosilicate channels. Dark-field TEM micrographs with
diffraction contrast originating exclusively from germanium show secti
ons of Ge crystallites taking the shape and periodicity of the mesosil
icate, indicating that the deposited semiconductor can fill the hexago
nal pores. This result shows promise for the use of mesopores as hosts
for semiconductor quantum wire structures.