Citation
Vv. Kotov et al., POSITRON-ANNIHILATION AND NMR-STUDIES OF THIN MULTILAYERED CO SI STRUCTURE/, Journal of magnetism and magnetic materials, 148(1-2), 1995, pp. 83-84
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
ISSN journal
03048853
Volume
148
Issue
1-2
Year of publication
1995
Pages
83 - 84
Database
ISI
SICI code
0304-8853(1995)148:1-2<83:PANOTM>2.0.ZU;2-Y
Abstract
Multilayered structures consisting of ten Co/Si pairs (20 and 80 nm th
ick, respectively) on Si(100) substrates have been studied by means of
positron annihilation and NMR techniques in the process of isochronal
annealing. Two stages of defect-structure evolution have been found a
nd accounted for the defect annealing in Co/Si film (below 400 degrees
C) and for the defect formation under the alpha --> beta phase transi
tion in Co layers at 470 degrees C.