MODELING HG1-XCDXTE SUBGRAIN GROWTH BY TH ERMAL ANNEALING

Authors
PEREZ LV TRIGUBO AB DERECA NEW
Citation
Lv. Perez et al., MODELING HG1-XCDXTE SUBGRAIN GROWTH BY TH ERMAL ANNEALING, Anales de la Asociacion Quimica Argentina, 82(6), 1994, pp. 461-468
Citations number
22
Categorie Soggetti
Chemistry
Journal title
Anales de la Asociacion Quimica Argentina → ACNP
ISSN journal
03650375
Volume
82
Issue
6
Year of publication
1994
Pages
461 - 468
Database
ISI
SICI code
0365-0375(1994)82:6<461:MHSGBT>2.0.ZU;2-P
Abstract
In Bridgman grown single crystalline Hg1-xCdxTe (x similar or equal to 0.2) it was found that edge dislocations are mostly aligned forming t ilt sub-boundaries separating adjacent subgrains with a misorientation angle phi in a range of 30'' < phi < 100''. The effect of thermal ann ealings at 650 degrees C on the increase of subgrain size is studied. Different growth models to explain the size increase were validated.