PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES

Authors
ORTON JW LACKLISON DE ANDRIANOV AV CHENG TS DEWSNIP DJ FOXON CT JENKINS LC HOOPER SE
Citation
Jw. Orton et al., PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 219-222
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
2
Year of publication
1997
Pages
219 - 222
Database
ISI
SICI code
0038-1101(1997)41:2<219:PSOSGG>2.0.ZU;2-Z
Abstract
We report the results of photoluminescence measurements on four MBE sa mples of GaN doped with Si at levels in the range 10(17)-10(19) cm(-3) . At the lower doping levels the near band edge emission is consistent with exciton recombination, being dominated by excitons bound either to neutral donors or to neutral accepters. On increasing the doping ab ove 10(18) cm(-3) the evidence suggests that recombination may be domi nated by free hole to donor-bound electron transitions which are consi derably broadened by donor banding effects. (C) 1997 Elsevier Science Ltd.