PECULIARITIES OF INTERBAND PHOTOLUMINESCENCE IN THE SEMIMAGNETIC SEMICONDUCTOR HG1-XMNXTE

Citation
Yi. Mazur et al., PECULIARITIES OF INTERBAND PHOTOLUMINESCENCE IN THE SEMIMAGNETIC SEMICONDUCTOR HG1-XMNXTE, Infrared physics & technology, 36(6), 1995, pp. 929-936
Citations number
20
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
13504495
Volume
36
Issue
6
Year of publication
1995
Pages
929 - 936
Database
ISI
SICI code
1350-4495(1995)36:6<929:POIPIT>2.0.ZU;2-H
Abstract
The results of photoluminescence (PL) investigations of semimagnetic H g1-xMnxTe single crystals are presented. The crystal composition range (x = 0.104, 0.167, 0.202) demonstrates the transformation of photolum inescence spectrum when the effective g-factor changes its sign. Tempe rature and magnetic field dependencies have shown a strong non-monoton ic behaviour of edge emission feature. An extremely narrow half width (2.5 meV) is observed at B = 2.3 T for x = 0.104. The blue shift of ph otoluminescence maximum with increasing magnetic field is described by the modified Pidgeon-Brown model. For x = 0.167 and x = 0.202 a stron g asymmetry of the photoluminescence peak is detected. Its behaviour i n a magnetic field requires further corrections in the Pidgeon-Brown c onsideration. Some arguments for a magneto-polaron mechanism of PL tem perature dependencies are presented.