HYDROGENATED ALUMINUM NITRIDE THIN-FILMS PREPARED BY RF REACTIVE SPUTTERING - INFRARED AND STRUCTURAL-PROPERTIES

Hydrogenated aluminum nitride thin films, AIN:H, were successfully dep osited by radio-frequency reactive sputtering of an aluminum target un der an argon-ammonia gas mixture. In-situ control of the nitrogen spec ies was performed by emission spectroscopy. Optical spectroscopy of th e gas phase revealed that growth processes depend on target nitriding. Specular reflectance Fourier transform infrared (FTIR) spectroscopy s howed the evolution of AIN longitudinal and transverse optical modes a s a function of temperature synthesis, film thickness and angle of inc idence. A structural study was carried out by transmission electron mi croscopy and X-ray diffraction. FTIR and secondary ion mass spectromet ry analyses showed that for samples exposed to room atmosphere, AIN:H reacts with air moisture, leading to the formation of a superficial la yer of aluminum hydroxide Al(OH)(3).