CONFIRMATION OF THE FRANZ-KELDYSH OSCILLATION DUE TO A 2-DIMENSIONAL ELECTRON-GAS IN GAAS AL0.7GA0.7AS MODULATION-DOPED SINGLE HETEROSTRUCTURES/

Authors
OH YT KANG TW KIM TW
Citation
Yt. Oh et al., CONFIRMATION OF THE FRANZ-KELDYSH OSCILLATION DUE TO A 2-DIMENSIONAL ELECTRON-GAS IN GAAS AL0.7GA0.7AS MODULATION-DOPED SINGLE HETEROSTRUCTURES/, Thin solid films, 265(1-2), 1995, pp. 92-95
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
265
Issue
1-2
Year of publication
1995
Pages
92 - 95
Database
ISI
SICI code
0040-6090(1995)265:1-2<92:COTFOD>2.0.ZU;2-8
Abstract
Shubnikov-de Haas and Van der Pauw Hall effects, and temperature and m odulation source wavelength-dependence photoreflectance (PR) measureme nts on GaAs/Al0.3Ga0.7As heterostructures grown by molecular beam epit axy have been carried out to investigate the electrical and optical pr operties of a two-dimensional electron gas (2DEG) in a GaAs layer. The results of the PR measurements showed that the 2DEG was transferred f rom the modulation-doped Al0.3Ga0.7As layer to the GaAs layer.