Yh. Jeong et al., EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS, JPN J A P 2, 34(10B), 1995, pp. 1329-1331
The effects of sulfide treatment on Al-P3N5/InP metal-insulator-semico
nductor (MIS) devices with a photochemical vapor deposit P3N5 insulati
ng film are investigated. The minimum density of interface trap states
is as low as 2.6 x 10(10)/cm(2) . eV, and has been obtained from a sa
mple sulfide-treated at 40 degrees C for 20 min. We have successfully
fabricated depletion-mode InP metal-insulator-semiconductor field-effe
ct transistors (MISFETs) for microwave power device applications. The
effective channel electron mobility is observed to be 3100 cm(2)/V . s
at 300 K. The extrinsic transconductance of 5.8 mS/mm shows a broad p
lateau region over a range of nearly 4 V gate voltage swing.