EFFECTS OF POSTANNEALING ON OXYGEN-CONTENT OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING

Effects of post-annealing on the depth profile of oxygen content of in dium tin oxide (ITO) films on glass substrates have been investigated. Absolute oxygen content of the films Nas estimated by a high-energy i on beam technique. The electrical properties and the oxygen contents, measured before and after post-annealing in vacuum, have been compared for films deposited under different conditions. Our present results i mplied that oxygen deficiency at the film surface, induced by post-ann ealing, might be responsible for the observed improvement of the elect rical properties.