TUNNELING EDGES AT STRONG DISORDER

Authors
Citation
J. Miller et Ag. Rojo, TUNNELING EDGES AT STRONG DISORDER, Physical review. B, Condensed matter, 52(16), 1995, pp. 11634-11637
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
16
Year of publication
1995
Pages
11634 - 11637
Database
ISI
SICI code
0163-1829(1995)52:16<11634:TEASD>2.0.ZU;2-R
Abstract
Scattering between edge states that bound one-dimensional domains of o pposite potential or flux is studied, in the presence of strong potent ial or flux disorder. A mobility edge is found as a function of disord er and energy, and we have characterized the extended regime. In the p resence of flux and/or potential disorder, the localization length sca les exponentially with the width of the barrier. We discuss implicatio ns for the random-flux problem.