ELECTRON-MOBILITY IN 2-DIMENSIONAL MODULATION-DOPED IN1-XALXAS IN1-YGAY AS ALLOY SYSTEMS/

The electronic mobility is investigated in the two-dimensional modulat ion-doped In1-xAlxAs/In1-yGayAs alloy system using a memory-function t heoretical framework. A variational wave-function model with penetrati on into the barrier side of the heterostructure is employed in order t o facilitate the use of analytic matrix elements for the various scatt ering mechanisms. Scattering due to polar optical (Frolich coupling, d eformation potential), acoustic (deformation potential), impurities (r emote and background), interface roughness, and alloy fluctuations are included in the calculations. The parameters used here are obtained w ithin the virtual crystal approximation appropriate to the composition s x and y studied in conjunction with the parameters for the parent co mpounds. The mobility results obtained versus temperature are compared with experimental data for the above system.