Ym. Galperin et Ka. Chao, RESONANT-TUNNELING IN THE PRESENCE OF A 2-LEVEL FLUCTUATOR - LOW-FREQUENCY NOISE, Physical review. B, Condensed matter, 52(16), 1995, pp. 12126-12134
We study current noise in a double-barrier resonant-tunneling structur
e due to dynamic defects that switch states because of their interacti
on with a thermal bath. The time fluctuations of the resonant level re
sult in low-frequency noise, the characteristics of which depend on th
e relative strengths of the electron escape rate, the coupling to the
defects, and the defect's switching rate. If the number of defects is
sufficiently large, the noise is of the 1/f type. It is shown that the
temperature dependence of the noise intensity becomes more pronounced
as the spacer gets thicker.