RESONANT-TUNNELING IN THE PRESENCE OF A 2-LEVEL FLUCTUATOR - LOW-FREQUENCY NOISE

Citation
Ym. Galperin et Ka. Chao, RESONANT-TUNNELING IN THE PRESENCE OF A 2-LEVEL FLUCTUATOR - LOW-FREQUENCY NOISE, Physical review. B, Condensed matter, 52(16), 1995, pp. 12126-12134
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
16
Year of publication
1995
Pages
12126 - 12134
Database
ISI
SICI code
0163-1829(1995)52:16<12126:RITPOA>2.0.ZU;2-#
Abstract
We study current noise in a double-barrier resonant-tunneling structur e due to dynamic defects that switch states because of their interacti on with a thermal bath. The time fluctuations of the resonant level re sult in low-frequency noise, the characteristics of which depend on th e relative strengths of the electron escape rate, the coupling to the defects, and the defect's switching rate. If the number of defects is sufficiently large, the noise is of the 1/f type. It is shown that the temperature dependence of the noise intensity becomes more pronounced as the spacer gets thicker.